Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrie...

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Detalles Bibliográficos
Autores principales: Fu, Chaochao, Zhou, Xiangbiao, Wang, Yan, Xu, Peng, Xu, Ming, Wu, Dongping, Luo, Jun, Zhao, Chao, Zhang, Shi-Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503036/
https://www.ncbi.nlm.nih.gov/pubmed/28773440
http://dx.doi.org/10.3390/ma9050315

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503036/
https://www.ncbi.nlm.nih.gov/pubmed/28773440
http://dx.doi.org/10.3390/ma9050315

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