Cargando…

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrie...

Descripción completa

Detalles Bibliográficos
Autores principales: Fu, Chaochao, Zhou, Xiangbiao, Wang, Yan, Xu, Peng, Xu, Ming, Wu, Dongping, Luo, Jun, Zhao, Chao, Zhang, Shi-Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503036/
https://www.ncbi.nlm.nih.gov/pubmed/28773440
http://dx.doi.org/10.3390/ma9050315
_version_ 1783249031161446400
author Fu, Chaochao
Zhou, Xiangbiao
Wang, Yan
Xu, Peng
Xu, Ming
Wu, Dongping
Luo, Jun
Zhao, Chao
Zhang, Shi-Li
author_facet Fu, Chaochao
Zhou, Xiangbiao
Wang, Yan
Xu, Peng
Xu, Ming
Wu, Dongping
Luo, Jun
Zhao, Chao
Zhang, Shi-Li
author_sort Fu, Chaochao
collection PubMed
description The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.
format Online
Article
Text
id pubmed-5503036
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-55030362017-07-28 Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing Fu, Chaochao Zhou, Xiangbiao Wang, Yan Xu, Peng Xu, Ming Wu, Dongping Luo, Jun Zhao, Chao Zhang, Shi-Li Materials (Basel) Article The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. MDPI 2016-04-27 /pmc/articles/PMC5503036/ /pubmed/28773440 http://dx.doi.org/10.3390/ma9050315 Text en © 2016 by the authors; Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Fu, Chaochao
Zhou, Xiangbiao
Wang, Yan
Xu, Peng
Xu, Ming
Wu, Dongping
Luo, Jun
Zhao, Chao
Zhang, Shi-Li
Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
title Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
title_full Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
title_fullStr Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
title_full_unstemmed Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
title_short Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
title_sort schottky barrier height tuning via the dopant segregation technique through low-temperature microwave annealing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503036/
https://www.ncbi.nlm.nih.gov/pubmed/28773440
http://dx.doi.org/10.3390/ma9050315
work_keys_str_mv AT fuchaochao schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing
AT zhouxiangbiao schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing
AT wangyan schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing
AT xupeng schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing
AT xuming schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing
AT wudongping schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing
AT luojun schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing
AT zhaochao schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing
AT zhangshili schottkybarrierheighttuningviathedopantsegregationtechniquethroughlowtemperaturemicrowaveannealing