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Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrie...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503036/ https://www.ncbi.nlm.nih.gov/pubmed/28773440 http://dx.doi.org/10.3390/ma9050315 |
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author | Fu, Chaochao Zhou, Xiangbiao Wang, Yan Xu, Peng Xu, Ming Wu, Dongping Luo, Jun Zhao, Chao Zhang, Shi-Li |
author_facet | Fu, Chaochao Zhou, Xiangbiao Wang, Yan Xu, Peng Xu, Ming Wu, Dongping Luo, Jun Zhao, Chao Zhang, Shi-Li |
author_sort | Fu, Chaochao |
collection | PubMed |
description | The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. |
format | Online Article Text |
id | pubmed-5503036 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-55030362017-07-28 Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing Fu, Chaochao Zhou, Xiangbiao Wang, Yan Xu, Peng Xu, Ming Wu, Dongping Luo, Jun Zhao, Chao Zhang, Shi-Li Materials (Basel) Article The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. MDPI 2016-04-27 /pmc/articles/PMC5503036/ /pubmed/28773440 http://dx.doi.org/10.3390/ma9050315 Text en © 2016 by the authors; Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Fu, Chaochao Zhou, Xiangbiao Wang, Yan Xu, Peng Xu, Ming Wu, Dongping Luo, Jun Zhao, Chao Zhang, Shi-Li Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing |
title | Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing |
title_full | Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing |
title_fullStr | Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing |
title_full_unstemmed | Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing |
title_short | Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing |
title_sort | schottky barrier height tuning via the dopant segregation technique through low-temperature microwave annealing |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503036/ https://www.ncbi.nlm.nih.gov/pubmed/28773440 http://dx.doi.org/10.3390/ma9050315 |
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