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Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrie...
Autores principales: | Fu, Chaochao, Zhou, Xiangbiao, Wang, Yan, Xu, Peng, Xu, Ming, Wu, Dongping, Luo, Jun, Zhao, Chao, Zhang, Shi-Li |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503036/ https://www.ncbi.nlm.nih.gov/pubmed/28773440 http://dx.doi.org/10.3390/ma9050315 |
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