All-Aluminum Thin Film Transistor Fabrication at Room Temperature

Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al(2)O(3)) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al(2)O(3) heterojunction unit....

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Detalles Bibliográficos
Autores principales: Yao, Rihui, Zheng, Zeke, Zeng, Yong, Liu, Xianzhe, Ning, Honglong, Hu, Shiben, Tao, Ruiqiang, Chen, Jianqiu, Cai, Wei, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503318/
https://www.ncbi.nlm.nih.gov/pubmed/28772579
http://dx.doi.org/10.3390/ma10030222

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503318/
https://www.ncbi.nlm.nih.gov/pubmed/28772579
http://dx.doi.org/10.3390/ma10030222

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