High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm(2)/...

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Detalles Bibliográficos
Autores principales: Zhang, Jiawei, Yang, Jia, Li, Yunpeng, Wilson, Joshua, Ma, Xiaochen, Xin, Qian, Song, Aimin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503323/
https://www.ncbi.nlm.nih.gov/pubmed/28772679
http://dx.doi.org/10.3390/ma10030319

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503323/
https://www.ncbi.nlm.nih.gov/pubmed/28772679
http://dx.doi.org/10.3390/ma10030319

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