Fabrication of p-Type ZnO:N Films by Oxidizing Zn(3)N(2) Films in Oxygen Plasma at Low Temperature

The oxygen vacancy (V(O)) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn(3)N(2) films in oxygen plasma and successfully prepared p-type ZnO:N films at temperatures ranging fr...

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Detalles Bibliográficos
Autores principales: Jin, Yuping, Zhang, Nuannuan, Zhang, Bin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503374/
https://www.ncbi.nlm.nih.gov/pubmed/28772595
http://dx.doi.org/10.3390/ma10030236

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503374/
https://www.ncbi.nlm.nih.gov/pubmed/28772595
http://dx.doi.org/10.3390/ma10030236

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