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Fabrication of p-Type ZnO:N Films by Oxidizing Zn(3)N(2) Films in Oxygen Plasma at Low Temperature
The oxygen vacancy (V(O)) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn(3)N(2) films in oxygen plasma and successfully prepared p-type ZnO:N films at temperatures ranging fr...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503374/ https://www.ncbi.nlm.nih.gov/pubmed/28772595 http://dx.doi.org/10.3390/ma10030236 |