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Nitrogen-Polar (000 [Formula: see text]) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found t...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5503403/ https://www.ncbi.nlm.nih.gov/pubmed/28772612 http://dx.doi.org/10.3390/ma10030252 |