Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiC(x)O(y)) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiC(x)O(y) materials were deposited via thermal chemical vapor deposition (T...

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Detalles Bibliográficos
Autores principales: Ford, Brian, Tabassum, Natasha, Nikas, Vasileios, Gallis, Spyros
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5506893/
https://www.ncbi.nlm.nih.gov/pubmed/28772802
http://dx.doi.org/10.3390/ma10040446

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5506893/
https://www.ncbi.nlm.nih.gov/pubmed/28772802
http://dx.doi.org/10.3390/ma10040446

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