Teflon/SiO(2) Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performa...

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Detalles Bibliográficos
Autores principales: Fan, Ching-Lin, Shang, Ming-Chi, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der, Hung, Bohr-Ran
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5507041/
https://www.ncbi.nlm.nih.gov/pubmed/28788026
http://dx.doi.org/10.3390/ma8041704

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5507041/
https://www.ncbi.nlm.nih.gov/pubmed/28788026
http://dx.doi.org/10.3390/ma8041704

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