Possible electric field induced indirect to direct band gap transition in MoSe(2)

Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX(2) (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically...

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Detalles Bibliográficos
Autores principales: Kim, B. S., Kyung, W. S., Seo, J. J., Kwon, J. Y., Denlinger, J. D., Kim, C., Park, S. R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5507882/
https://www.ncbi.nlm.nih.gov/pubmed/28701785
http://dx.doi.org/10.1038/s41598-017-05613-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5507882/
https://www.ncbi.nlm.nih.gov/pubmed/28701785
http://dx.doi.org/10.1038/s41598-017-05613-5

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