Possible electric field induced indirect to direct band gap transition in MoSe(2)

Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX(2) (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX(2) have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX(2) into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe(2) that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe(2). The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe(2), our data suggest that direct band-gap in MoSe(2) can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.