Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO(2) single crystals

The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped TiO(2) t...

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Detalles Bibliográficos
Autores principales: Kawarasaki, Masaru, Tanabe, Kenji, Terasaki, Ichiro, Fujii, Yasuhiro, Taniguchi, Hiroki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5509748/
https://www.ncbi.nlm.nih.gov/pubmed/28706304
http://dx.doi.org/10.1038/s41598-017-05651-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5509748/
https://www.ncbi.nlm.nih.gov/pubmed/28706304
http://dx.doi.org/10.1038/s41598-017-05651-z

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