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Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO(2) single crystals
The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped TiO(2) t...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5509748/ https://www.ncbi.nlm.nih.gov/pubmed/28706304 http://dx.doi.org/10.1038/s41598-017-05651-z |