Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y(2)O(3) films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parame...

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Detalles Bibliográficos
Autores principales: Peng, Bin, Gong, Dongdong, Zhang, Wanli, Jiang, Jianying, Shu, Lin, Zhang, Yahui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512352/
https://www.ncbi.nlm.nih.gov/pubmed/28773806
http://dx.doi.org/10.3390/ma9080686

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512352/
https://www.ncbi.nlm.nih.gov/pubmed/28773806
http://dx.doi.org/10.3390/ma9080686

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