Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the...

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Detalles Bibliográficos
Autores principales: Wu, Jingjin, Zhao, Yinchao, Zhao, Ce Zhou, Yang, Li, Lu, Qifeng, Zhang, Qian, Smith, Jeremy, Zhao, Yongming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512517/
https://www.ncbi.nlm.nih.gov/pubmed/28773816
http://dx.doi.org/10.3390/ma9080695

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512517/
https://www.ncbi.nlm.nih.gov/pubmed/28773816
http://dx.doi.org/10.3390/ma9080695

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