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Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films
In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B film...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512638/ https://www.ncbi.nlm.nih.gov/pubmed/28788250 http://dx.doi.org/10.3390/ma7117339 |