Trap Exploration in Amorphous Boron-Doped ZnO Films

This paper addresses the trap exploration in amorphous boron-doped ZnO (ZnO:B) films using an asymmetric structure of metal-oxide-metal. In this work, the structure of Ni/ZnO:B/TaN is adopted and the ZnO:B film is deposited by RF magnetron sputtering. The as-deposited ZnO:B film is amorphous and bec...

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Detalles Bibliográficos
Autores principales: Chiu, Fu-Chien, Chiang, Wen-Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512656/
https://www.ncbi.nlm.nih.gov/pubmed/28793534
http://dx.doi.org/10.3390/ma8095276

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512656/
https://www.ncbi.nlm.nih.gov/pubmed/28793534
http://dx.doi.org/10.3390/ma8095276

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