Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO t...

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Detalles Bibliográficos
Autores principales: Pu, Nen-Wen, Liu, Wei-Sheng, Cheng, Huai-Ming, Hu, Hung-Chun, Hsieh, Wei-Ting, Yu, Hau-Wei, Liang, Shih-Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512923/
https://www.ncbi.nlm.nih.gov/pubmed/28793575
http://dx.doi.org/10.3390/ma8095316

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512923/
https://www.ncbi.nlm.nih.gov/pubmed/28793575
http://dx.doi.org/10.3390/ma8095316

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