Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO t...

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Detalles Bibliográficos
Autores principales: Pu, Nen-Wen, Liu, Wei-Sheng, Cheng, Huai-Ming, Hu, Hung-Chun, Hsieh, Wei-Ting, Yu, Hau-Wei, Liang, Shih-Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5512923/
https://www.ncbi.nlm.nih.gov/pubmed/28793575
http://dx.doi.org/10.3390/ma8095316
Descripción
Sumario:In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10(−4) Ω/cm), carrier concentration (4.1 × 10(21) cm(−3)), carrier mobility (10 cm(2)/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10(21) cm(−3)) with a high figure of merit (81.1 × 10(−3) Ω(−1)) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

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