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Progress to a Gallium-Arsenide Deep-Center Laser
Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Molecular Diversity Preservation International
2009
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5513387/ http://dx.doi.org/10.3390/ma2041599 |