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Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films

A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu(2)O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu(2)O is governed by...

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Detalles Bibliográficos
Autores principales: Han, Sanggil, Flewitt, Andrew J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5515854/
https://www.ncbi.nlm.nih.gov/pubmed/28720754
http://dx.doi.org/10.1038/s41598-017-05893-x