Cargando…
Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films
A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu(2)O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu(2)O is governed by...
Autores principales: | , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5515854/ https://www.ncbi.nlm.nih.gov/pubmed/28720754 http://dx.doi.org/10.1038/s41598-017-05893-x |
_version_ | 1783251042380546048 |
---|---|
author | Han, Sanggil Flewitt, Andrew J. |
author_facet | Han, Sanggil Flewitt, Andrew J. |
author_sort | Han, Sanggil |
collection | PubMed |
description | A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu(2)O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu(2)O is governed by grain-boundary-limited conduction (GLC), while after high-temperature annealing, GLC becomes insignificant and trap-limited conduction (TLC) dominates. This suggests that the very low Hall mobility of as-deposited Cu(2)O is due to significant GLC, and the Hall mobility enhancement by high-temperature annealing is determined by TLC. Evaluation of the grain size and the energy barrier height at the grain boundary shows an increase in the grain size and a considerable decrease in the energy barrier height after high-temperature annealing, which is considered to be the cause of the significant reduction in the GLC effect. Additionally, the density of copper vacancies was extracted; this quantitatively shows that an increase in annealing temperature leads to a reduction in copper vacancies. |
format | Online Article Text |
id | pubmed-5515854 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-55158542017-07-19 Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films Han, Sanggil Flewitt, Andrew J. Sci Rep Article A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu(2)O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found that carrier transport in as-deposited Cu(2)O is governed by grain-boundary-limited conduction (GLC), while after high-temperature annealing, GLC becomes insignificant and trap-limited conduction (TLC) dominates. This suggests that the very low Hall mobility of as-deposited Cu(2)O is due to significant GLC, and the Hall mobility enhancement by high-temperature annealing is determined by TLC. Evaluation of the grain size and the energy barrier height at the grain boundary shows an increase in the grain size and a considerable decrease in the energy barrier height after high-temperature annealing, which is considered to be the cause of the significant reduction in the GLC effect. Additionally, the density of copper vacancies was extracted; this quantitatively shows that an increase in annealing temperature leads to a reduction in copper vacancies. Nature Publishing Group UK 2017-07-18 /pmc/articles/PMC5515854/ /pubmed/28720754 http://dx.doi.org/10.1038/s41598-017-05893-x Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Han, Sanggil Flewitt, Andrew J. Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films |
title | Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films |
title_full | Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films |
title_fullStr | Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films |
title_full_unstemmed | Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films |
title_short | Analysis of the Conduction Mechanism and Copper Vacancy Density in p-type Cu(2)O Thin Films |
title_sort | analysis of the conduction mechanism and copper vacancy density in p-type cu(2)o thin films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5515854/ https://www.ncbi.nlm.nih.gov/pubmed/28720754 http://dx.doi.org/10.1038/s41598-017-05893-x |
work_keys_str_mv | AT hansanggil analysisoftheconductionmechanismandcoppervacancydensityinptypecu2othinfilms AT flewittandrewj analysisoftheconductionmechanismandcoppervacancydensityinptypecu2othinfilms |