Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics

Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher...

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Detalles Bibliográficos
Autores principales: Jang, Hyun-June, Joong Lee, Ki, Jo, Kwang-Won, Katz, Howard E., Cho, Won-Ju, Shin, Yong-Beom
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5516029/
https://www.ncbi.nlm.nih.gov/pubmed/28720907
http://dx.doi.org/10.1038/s41598-017-06040-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5516029/
https://www.ncbi.nlm.nih.gov/pubmed/28720907
http://dx.doi.org/10.1038/s41598-017-06040-2

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