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Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics
Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher...
Autores principales: | Jang, Hyun-June, Joong Lee, Ki, Jo, Kwang-Won, Katz, Howard E., Cho, Won-Ju, Shin, Yong-Beom |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5516029/ https://www.ncbi.nlm.nih.gov/pubmed/28720907 http://dx.doi.org/10.1038/s41598-017-06040-2 |
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