Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge(2)Sb(2)Te(5) Thin Film

Phase change memory (PCM) is a promising nonvolatile memory to reform current commercial computing system. Inhibiting face-centered cubic (f-) to hexagonal (h-) phase transition of Ge(2)Sb(2)Te(5) (GST) thin film is essential for realizing high-density, high-speed, and low-power PCM. Although the at...

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Detalles Bibliográficos
Autores principales: Zheng, Yonghui, Cheng, Yan, Huang, Rong, Qi, Ruijuan, Rao, Feng, Ding, Keyuan, Yin, Weijun, Song, Sannian, Liu, Weili, Song, Zhitang, Feng, Songlin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5517630/
https://www.ncbi.nlm.nih.gov/pubmed/28725023
http://dx.doi.org/10.1038/s41598-017-06426-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5517630/
https://www.ncbi.nlm.nih.gov/pubmed/28725023
http://dx.doi.org/10.1038/s41598-017-06426-2

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