Ta(2)O(5)-TiO(2) Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory

The charge-trapping memory devices with a structure Pt/Al(2)O(3)/(Ta(2)O(5))(x)(TiO(2))(1−x)/Al(2)O(3)/p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta(2)O(5))(x)(TiO(2))(1−x) and Si substrate was desi...

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Detalles Bibliográficos
Autores principales: Wei, C. Y., Shen, B., Ding, P., Han, P., Li, A. D., Xia, Y. D., Xu, B., Yin, J., Liu, Z. G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5519694/
https://www.ncbi.nlm.nih.gov/pubmed/28729693
http://dx.doi.org/10.1038/s41598-017-05248-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5519694/
https://www.ncbi.nlm.nih.gov/pubmed/28729693
http://dx.doi.org/10.1038/s41598-017-05248-6

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