Ab initio calculation of energy levels for phosphorus donors in silicon

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modeling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electro...

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Detalles Bibliográficos
Autores principales: Smith, J. S., Budi, A., Per, M. C., Vogt, N., Drumm, D. W., Hollenberg, L. C. L., Cole, J. H., Russo, S. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5519722/
https://www.ncbi.nlm.nih.gov/pubmed/28729674
http://dx.doi.org/10.1038/s41598-017-06296-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5519722/
https://www.ncbi.nlm.nih.gov/pubmed/28729674
http://dx.doi.org/10.1038/s41598-017-06296-8

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