Cargando…
Ab initio calculation of energy levels for phosphorus donors in silicon
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modeling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electro...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5519722/ https://www.ncbi.nlm.nih.gov/pubmed/28729674 http://dx.doi.org/10.1038/s41598-017-06296-8 |