Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach

We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial...

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Detalles Bibliográficos
Autores principales: Kangawa, Yoshihiro, Akiyama, Toru, Ito, Tomonori, Shiraishi, Kenji, Nakayama, Takashi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2013
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5521308/
https://www.ncbi.nlm.nih.gov/pubmed/28811438
http://dx.doi.org/10.3390/ma6083309

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5521308/
https://www.ncbi.nlm.nih.gov/pubmed/28811438
http://dx.doi.org/10.3390/ma6083309

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