Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps

In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage, the rRTN...

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Detalles Bibliográficos
Autores principales: Guo, Shaofeng, Wang, Runsheng, Mao, Dongyuan, Wang, Yangyuan, Huang, Ru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5524939/
https://www.ncbi.nlm.nih.gov/pubmed/28740136
http://dx.doi.org/10.1038/s41598-017-06467-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5524939/
https://www.ncbi.nlm.nih.gov/pubmed/28740136
http://dx.doi.org/10.1038/s41598-017-06467-7

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