Cargando…
Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage, the rRTN...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5524939/ https://www.ncbi.nlm.nih.gov/pubmed/28740136 http://dx.doi.org/10.1038/s41598-017-06467-7 |