High Photocurrent in Gated Graphene–Silicon Hybrid Photodiodes

[Image: see text] Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO(2))/Si areas...

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Detalles Bibliográficos
Autores principales: Riazimehr, Sarah, Kataria, Satender, Bornemann, Rainer, Haring Bolívar, Peter, Ruiz, Francisco Javier Garcia, Engström, Olof, Godoy, Andres, Lemme, Max C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5526651/
https://www.ncbi.nlm.nih.gov/pubmed/28781983
http://dx.doi.org/10.1021/acsphotonics.7b00285

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5526651/
https://www.ncbi.nlm.nih.gov/pubmed/28781983
http://dx.doi.org/10.1021/acsphotonics.7b00285

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