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High Photocurrent in Gated Graphene–Silicon Hybrid Photodiodes
[Image: see text] Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO(2))/Si areas...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5526651/ https://www.ncbi.nlm.nih.gov/pubmed/28781983 http://dx.doi.org/10.1021/acsphotonics.7b00285 |