Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposition is c...

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Detalles Bibliográficos
Autores principales: Zhu, Zhongyunshen, Song, Yuxin, Chen, Qimiao, Zhang, Zhenpu, Zhang, Liyao, Li, Yaoyao, Wang, Shumin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5533697/
https://www.ncbi.nlm.nih.gov/pubmed/28759987
http://dx.doi.org/10.1186/s11671-017-2243-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5533697/
https://www.ncbi.nlm.nih.gov/pubmed/28759987
http://dx.doi.org/10.1186/s11671-017-2243-1

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