Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to som...

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Detalles Bibliográficos
Autores principales: Hsu, Ming-Hung, Chang, Sheng-Po, Chang, Shoou-Jinn, Wu, Wei-Ting, Li, Jyun-Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5535222/
https://www.ncbi.nlm.nih.gov/pubmed/28672868
http://dx.doi.org/10.3390/nano7070156

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5535222/
https://www.ncbi.nlm.nih.gov/pubmed/28672868
http://dx.doi.org/10.3390/nano7070156

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