Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creati...

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Detalles Bibliográficos
Autores principales: Tseng, Alex C., Lynall, David, Savelyev, Igor, Blumin, Marina, Wang, Shiliang, Ruda, Harry E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5539772/
https://www.ncbi.nlm.nih.gov/pubmed/28714903
http://dx.doi.org/10.3390/s17071640

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5539772/
https://www.ncbi.nlm.nih.gov/pubmed/28714903
http://dx.doi.org/10.3390/s17071640

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