Cargando…

Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creati...

Descripción completa

Detalles Bibliográficos
Autores principales:	Tseng, Alex C., Lynall, David, Savelyev, Igor, Blumin, Marina, Wang, Shiliang, Ruda, Harry E.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5539772/ https://www.ncbi.nlm.nih.gov/pubmed/28714903 http://dx.doi.org/10.3390/s17071640

Ejemplares similares

A soft lithographic approach to fabricate InAs nanowire field-effect transistors
por: Lee, Sang Hwa, et al.
Publicado: (2018)

Conductometric Sensing with Individual InAs Nanowires
por: Demontis, Valeria, et al.
Publicado: (2019)

Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
por: Viti, Leonardo, et al.
Publicado: (2012)

Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
por: Zha, Chaofei, et al.
Publicado: (2022)

Photoluminescence Characteristics of Zinc Blende InAs Nanowires
por: Anyebe, E. A., et al.
Publicado: (2019)

Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor
por: Shen, Rui, et al.
Publicado: (2022)

Andreev Molecule in Parallel InAs Nanowires
por: Kürtössy, Olivér, et al.
Publicado: (2021)

Nanowire Field-Effect Transistor Sensors
por: Zhang, Anqi, et al.
Publicado: (2016)

Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
por: Takase, K., et al.
Publicado: (2017)

Self-Assembled InAs Nanowires as Optical Reflectors
por: Floris, Francesco, et al.
Publicado: (2017)

InAs/Si Hetero-Junction Nanotube Tunnel Transistors
por: Hanna, Amir N., et al.
Publicado: (2015)

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016)

Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing
por: Bhattacharjee, Abhiroop, et al.
Publicado: (2020)

Acrylamide Hydrogel-Modified Silicon Nanowire Field-Effect Transistors for pH Sensing
por: Li, Gangrong, et al.
Publicado: (2022)

Nanowire field effect transistors principles and applications
por: Kim, Dae, et al.
Publicado: (2014)

Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires
por: Elalaily, Tosson, et al.
Publicado: (2021)

Special Issue: Nanowire Field-Effect Transistor (FET)
por: Seoane, Natalia, et al.
Publicado: (2020)

Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires
por: Haas, Fabian, et al.
Publicado: (2016)

Self-catalyzed Growth of InAs Nanowires on InP Substrate
por: Li, Bang, et al.
Publicado: (2017)

Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
por: Güsken, Nicholas A., et al.
Publicado: (2019)

Self-Catalyzed InSb/InAs Quantum Dot Nanowires
por: Arif, Omer, et al.
Publicado: (2021)

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory
por: Arif, Omer, et al.
Publicado: (2020)

Silicon nanowire transistors
por: Bindal, Ahmet, et al.
Publicado: (2016)

Modeling nanowire and double-gate junctionless field-effect transistors
por: Jazaeri, Farzan, et al.
Publicado: (2018)

Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors
por: Feng, Ping, et al.
Publicado: (2014)

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
por: Paladugu, M, et al.
Publicado: (2009)

InAs-mediated growth of vertical InSb nanowires on Si substrates
por: Li, Tianfeng, et al.
Publicado: (2013)

Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions
por: Tiira, J., et al.
Publicado: (2017)

Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires
por: Elalaily, Tosson, et al.
Publicado: (2023)

Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states
por: Degtyarev, V. E., et al.
Publicado: (2017)

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
por: Presnov, Denis E, et al.
Publicado: (2013)

Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography
por: Lim, Cheol-Min, et al.
Publicado: (2017)

Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
por: Yang, Yejin, et al.
Publicado: (2021)

Multimode Silicon Nanowire Transistors
por: Glassner, Sebastian, et al.
Publicado: (2014)

Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors
por: Lee, Youseung, et al.
Publicado: (2019)

Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared
por: Asgari, Mahdi, et al.
Publicado: (2021)

Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
por: Li, Tianfeng, et al.
Publicado: (2011)

Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
por: Madsen, Morten Hannibal, et al.
Publicado: (2011)

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy
por: Zhuang, Qian D, et al.
Publicado: (2014)

Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water
por: Park, Dong Woo, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_pprol07mlkq1u1kjcq2kt0os53