Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded Al(x)Ga(1−x)N Buffer Layer

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known t...

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Detalles Bibliográficos
Autores principales: Lee, Chang-Ju, Won, Chul-Ho, Lee, Jung-Hee, Hahm, Sung-Ho, Park, Hongsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5539806/
https://www.ncbi.nlm.nih.gov/pubmed/28753989
http://dx.doi.org/10.3390/s17071684

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5539806/
https://www.ncbi.nlm.nih.gov/pubmed/28753989
http://dx.doi.org/10.3390/s17071684

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