Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots

Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series...

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Detalles Bibliográficos
Autores principales: Lin, Tzu-Neng, Santiago, Svette Reina Merden, Yuan, Chi-Tsu, Chiu, Kuo-Pin, Shen, Ji-Lin, Wang, Ting-Chun, Kuo, Hao-Chung, Chiu, Ching-Hsueh, Yao, Yung-Chi, Lee, Ya-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5541035/
https://www.ncbi.nlm.nih.gov/pubmed/28769094
http://dx.doi.org/10.1038/s41598-017-07483-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5541035/
https://www.ncbi.nlm.nih.gov/pubmed/28769094
http://dx.doi.org/10.1038/s41598-017-07483-3

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