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High-quality AlN grown with a single substrate temperature below 1200 °C
1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH(3)-flow condition, serving as an alternative for the commonly us...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5541044/ https://www.ncbi.nlm.nih.gov/pubmed/28769071 http://dx.doi.org/10.1038/s41598-017-07616-8 |