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High-quality AlN grown with a single substrate temperature below 1200 °C

1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH(3)-flow condition, serving as an alternative for the commonly us...

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Detalles Bibliográficos
Autores principales:	Huang, Chun-Pin, Gupta, Kapil, Wang, Chao-Hung, Liu, Chuan-Pu, Lai, Kun-Yu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5541044/ https://www.ncbi.nlm.nih.gov/pubmed/28769071 http://dx.doi.org/10.1038/s41598-017-07616-8

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