Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al(2)O(3) film grown under the same conditions. These impressive transport properties are...

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Detalles Bibliográficos
Autores principales: Choi, Sumin, Rogers, David J., Sandana, Eric V., Bove, Philippe, Teherani, Ferechteh H., Nenstiel, Christian, Hoffmann, Axel, McClintock, Ryan, Razeghi, Manijeh, Look, David, Gentle, Angus, Phillips, Matthew R., Ton-That, Cuong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5547142/
https://www.ncbi.nlm.nih.gov/pubmed/28784987
http://dx.doi.org/10.1038/s41598-017-07568-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5547142/
https://www.ncbi.nlm.nih.gov/pubmed/28784987
http://dx.doi.org/10.1038/s41598-017-07568-z

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