Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al(2)O(3) film grown under the same conditions. These impressive transport properties are...

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Autores principales: Choi, Sumin, Rogers, David J., Sandana, Eric V., Bove, Philippe, Teherani, Ferechteh H., Nenstiel, Christian, Hoffmann, Axel, McClintock, Ryan, Razeghi, Manijeh, Look, David, Gentle, Angus, Phillips, Matthew R., Ton-That, Cuong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
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Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5547142/
https://www.ncbi.nlm.nih.gov/pubmed/28784987
http://dx.doi.org/10.1038/s41598-017-07568-z
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author Choi, Sumin
Rogers, David J.
Sandana, Eric V.
Bove, Philippe
Teherani, Ferechteh H.
Nenstiel, Christian
Hoffmann, Axel
McClintock, Ryan
Razeghi, Manijeh
Look, David
Gentle, Angus
Phillips, Matthew R.
Ton-That, Cuong
author_facet Choi, Sumin
Rogers, David J.
Sandana, Eric V.
Bove, Philippe
Teherani, Ferechteh H.
Nenstiel, Christian
Hoffmann, Axel
McClintock, Ryan
Razeghi, Manijeh
Look, David
Gentle, Angus
Phillips, Matthew R.
Ton-That, Cuong
author_sort Choi, Sumin
collection PubMed
description We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al(2)O(3) film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.
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spelling pubmed-55471422017-08-09 Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface Choi, Sumin Rogers, David J. Sandana, Eric V. Bove, Philippe Teherani, Ferechteh H. Nenstiel, Christian Hoffmann, Axel McClintock, Ryan Razeghi, Manijeh Look, David Gentle, Angus Phillips, Matthew R. Ton-That, Cuong Sci Rep Article We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al(2)O(3) film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling. Nature Publishing Group UK 2017-08-07 /pmc/articles/PMC5547142/ /pubmed/28784987 http://dx.doi.org/10.1038/s41598-017-07568-z Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Choi, Sumin
Rogers, David J.
Sandana, Eric V.
Bove, Philippe
Teherani, Ferechteh H.
Nenstiel, Christian
Hoffmann, Axel
McClintock, Ryan
Razeghi, Manijeh
Look, David
Gentle, Angus
Phillips, Matthew R.
Ton-That, Cuong
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_full Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_fullStr Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_full_unstemmed Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_short Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
title_sort radiative recombination of confined electrons at the mgzno/zno heterojunction interface
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5547142/
https://www.ncbi.nlm.nih.gov/pubmed/28784987
http://dx.doi.org/10.1038/s41598-017-07568-z
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