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Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al(2)O(3) film grown under the same conditions. These impressive transport properties are...
Autores principales: | Choi, Sumin, Rogers, David J., Sandana, Eric V., Bove, Philippe, Teherani, Ferechteh H., Nenstiel, Christian, Hoffmann, Axel, McClintock, Ryan, Razeghi, Manijeh, Look, David, Gentle, Angus, Phillips, Matthew R., Ton-That, Cuong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5547142/ https://www.ncbi.nlm.nih.gov/pubmed/28784987 http://dx.doi.org/10.1038/s41598-017-07568-z |
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