Ion Beam Assisted Deposition of Thin Epitaxial GaN Films

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irr...

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Detalles Bibliográficos
Autores principales: Rauschenbach, Bernd, Lotnyk, Andriy, Neumann, Lena, Poppitz, David, Gerlach, Jürgen W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551733/
https://www.ncbi.nlm.nih.gov/pubmed/28773052
http://dx.doi.org/10.3390/ma10070690

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551733/
https://www.ncbi.nlm.nih.gov/pubmed/28773052
http://dx.doi.org/10.3390/ma10070690

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