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Ion Beam Assisted Deposition of Thin Epitaxial GaN Films

The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irr...

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Detalles Bibliográficos
Autores principales:	Rauschenbach, Bernd, Lotnyk, Andriy, Neumann, Lena, Poppitz, David, Gerlach, Jürgen W.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551733/ https://www.ncbi.nlm.nih.gov/pubmed/28773052 http://dx.doi.org/10.3390/ma10070690

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