Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mi...

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Detalles Bibliográficos
Autores principales: Radek, Manuel, Liedke, Bartosz, Schmidt, Bernd, Voelskow, Matthias, Bischoff, Lothar, Lundsgaard Hansen, John, Nylandsted Larsen, Arne, Bougeard, Dominique, Böttger, Roman, Prucnal, Slawomir, Posselt, Matthias, Bracht, Hartmut
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551856/
https://www.ncbi.nlm.nih.gov/pubmed/28773172
http://dx.doi.org/10.3390/ma10070813

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551856/
https://www.ncbi.nlm.nih.gov/pubmed/28773172
http://dx.doi.org/10.3390/ma10070813

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