Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition....

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Detalles Bibliográficos
Autores principales: Li, Lianbi, Zang, Yuan, Hu, Jichao, Lin, Shenghuang, Chen, Zhiming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5552176/
https://www.ncbi.nlm.nih.gov/pubmed/28772944
http://dx.doi.org/10.3390/ma10060583

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5552176/
https://www.ncbi.nlm.nih.gov/pubmed/28772944
http://dx.doi.org/10.3390/ma10060583

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