Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmis...

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Detalles Bibliográficos
Autores principales: Tasi, Chi-Tsung, Wang, Wei-Kai, Tsai, Tsung-Yen, Huang, Shih-Yung, Horng, Ray-Hua, Wuu, Dong-Sing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5553422/
https://www.ncbi.nlm.nih.gov/pubmed/28772961
http://dx.doi.org/10.3390/ma10060605

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5553422/
https://www.ncbi.nlm.nih.gov/pubmed/28772961
http://dx.doi.org/10.3390/ma10060605

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